powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com dual igbtmod? s-series module 450 amperes/1200 volts CM450DY-24S 1 05/11 rev. 0 outline drawing and circuit diagram dimensions inches millimeters a 4.33 110.0 b 3.15 80.0 c 1.14+0.04/-0.02 29.0+1.0/-0.5 d 3.660.01 93.00.25 e 2.440.01 62.00.25 f 0.98 25.0 g 0.24 6.0 h 0.59 15.0 j 0.81 20.5 k 0.55 14.0 l 0.26 dia. dia. 6.5 m m6 metric m6 dimensions inches millimeters n 1.18 30.0 p 0.71 18.0 q 0.28 7.0 r 0.83 21.2 s 0.33 8.5 t 0.0157 0.4 u 0.110 2.8 v 0.16 4.0 w 0.30 7.5 x 0.21 5.3 y 0.47 12.0 z 0.85 21.5 a w f f n j g g h e b l (4 places) d m (3 places) k k k p p p q q v z y x v u c s r c2e1 e2 c1 g2 e2 e1 g1 g2 e2 e1 g1 c1 e2 c2e1 tr2 di2 tr1 di1 label tolerance otherwise specified division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1. 2 description: powerex dual igbtmod? modules are designed for use in switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control ups welding power supplies laser power supplies ordering information: example: select the complete module number you desire from the table - i.e. CM450DY-24S is a 1200v (v ces ), 450 ampere dual igbtmod? power module. current rating v ces type amperes volts (x 50) cm 450 24
CM450DY-24S dual igbtmod? s-series module 450 amperes/1200 voltstt powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 05/11 rev. 0 absolute maximum ratings, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol rating units collector-emitter voltage (v ge = 0v) v ces 1200 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current (dc, t c = 125c) *2,*8 i c 410 amperes collector current (pulse, repetitive) *3 i crm 900 amperes total power dissipation (t c = 25c) *2,*4 p tot 3330 watts emitter current (t c = 25c) *2,*4,*8 i e *1 410 amperes emitter current (pulse, repetitive) *3 i erm *1 900 amperes module characteristics symbol rating units maximum junction temperature t j(max) +175 c operating junction temperature t j(op) -40 to +150 c storage temperature t stg -40 to +125 c case temperature ,*2 t c -40 to +125 c isolation voltage (terminals to baseplate, rms, f = 60hz, ac 1 minute) v iso 2500 volts *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *3 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 junction temperature (t j ) should not increase beyond maximum junction temperature (t j(max) ) rating. *8 this model has 450a size igbt and fwdi chips. this package limitation is based on package issue. 0 0 0 0 20.6 20.4 33.6 46.8 77.4 33.6 46.6 di1 di1 di1 tr2 tr2 tr2 tr1 tr1 tr1 di2 di2 di2 66.2 21.5 21.6 35.0 48.2 48.4 45.6 33.3 label side tr1 / tr2: igbt, di1 / di2: fwdi each mark points to the center position of each chip.
CM450DY-24S dual igbtmod? s-series module 450 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3 05/11 rev. 0 electrical characteristics, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v 1 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 45ma, v ce = 10v 5.4 6 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 450a, v ge = 15v, t j = 25c *5 1.80 2.25 volts (terminal) i c = 450a, v ge = 15v, t j = 125c *5 2.05 volts i c = 450a, v ge = 15v, t j = 150c *5 2.10 volts collector-emitter saturation voltage v ce(sat) i c = 450a, v ge = 15v, t j = 25c *5 1.70 2.15 volts (chip) i c = 450a, v ge = 15v, t j = 125c *5 1.90 volts i c = 450a, v ge = 15v, t j = 150c *5 1.95 volts input capacitance c ies 45 nf output capacitance c oes v ce = 10v, v ge = 0v 9.0 nf reverse transfer capacitance c res 0.75 nf gate charge q g v cc = 600v, i c = 450a, v ge = 15v 1050 nc turn-on delay time t d(on) 800 ns rise time t r v cc = 600v, i c = 450a, v ge = 15v, 200 ns turn-off delay time t d(off) r g = 0?, inductive load 600 ns fall time t f 300 ns emitter-collector voltage v ec *1 i e = 450a, v ge = 0v, t j = 25c *5 1.85 2.30 volts (terminal) i e = 450a, v ge = 0v, t j = 125c *5 1.85 volts i e = 450a, v ge = 0v, t j = 150c *5 1.85 volts emitter-collector voltage v ec *1 i e = 450a, v ge = 0v, t j = 25c *5 1.70 2.15 volts (chip) i e = 450a, v ge = 0v, t j = 125c *5 1.70 volts i e = 450a, v ge = 0v, t j = 150c *5 1.70 volts reverse recovery time t rr *1 v cc = 600v, i e = 450a, v ge = 15v 300 ns reverse recovery charge q rr *1 r g = 0?, inductive load 24 c turn-on switching energy per pulse e on v cc = 600v, i c = i e = 450a, 54.9 mj turn-off switching energy per pulse e off v ge = 15v, r g = 0?, 48.0 mj reverse recovery energy per pulse e rr *1 t j = 150c, inductive load 32.4 mj internal lead resistance r cc' + ee' main terminals-chip, 0.7 m? per switch,t c = 25c *2 internal gate resistance r g per switch 4.3 ? *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *5 pulse width and repetition rate should be such as to cause negligible temperature rise. 0 0 0 0 20.6 20.4 33.6 46.8 77.4 33.6 46.6 di1 di1 di1 tr2 tr2 tr2 tr1 tr1 tr1 di2 di2 di2 66.2 21.5 21.6 35.0 48.2 48.4 45.6 33.3 label side tr1 / tr2: igbt, di1 / di2: fwdi each mark points to the center position of each chip.
CM450DY-24S dual igbtmod? s-series module 450 amperes/1200 voltstt powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 05/11 rev. 0 thermal resistance characteristics , t j = 25c unless otherwise specifed thermal resistance, junction to case *2 r th(j-c) q per inverter igbt 0.045 k/w thermal resistance, junction to case *2 r th(j-c) d per inverter fwdi 0.068 k/w contact thermal resistance, r th(c-f) thermal grease applied 0.018 k/w case to heatsink *2 (per 1 module) *6 mechanical characteristics mounting torque m t main terminals, m6 screw 31 35 40 in-lb m s mounting to heatsink, m6 screw 31 35 40 in-lb creepage distance d s terminal to terminal mm terminal to baseplate mm clearance d a terminal to terminal mm terminal to baseplate mm weight m 580 grams flatness of baseplate e c on centerline x, y *7 -100 100 m recommended operating conditons, t a = 25c (dc) supply voltage v cc applied across c1-e2 600 850 volts gate (-emitter drive) voltage v ge(on) applied across g1-es1 / g2-es2 13.5 15.0 16.5 volts external gate resistance r g per switch 0 8 ? *2 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *6 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *7 baseplate (mounting side) flatness measurement points (x, y) are shown in the figure below. x bottom ? concave 3 mm + convex ? concave + convex bottom bottom label side y 0 0 0 0 20.6 20.4 33.6 46.8 77.4 33.6 46.6 di1 di1 di1 tr2 tr2 tr2 tr1 tr1 tr1 di2 di2 di2 66.2 21.5 21.6 35.0 48.2 48.4 45.6 33.3 label side tr1 / tr2: igbt, di1 / di2: fwdi each mark points to the center position of each chip.
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